MiniSKiiP 1 SEMIKRON integrated intelligent Power SKiiP 11 NAB 06 3-phase bridge rectifier braking chopper 3-phase bridge inverter

Bridge Rectifier VRRM Theatsink °C ID IFSM = 10 ms; sin. = 10 ms; sin. I2t Tj Tstg Visol AC, 1 min.

Symbol Conditions 1) IGBT - Inverter & Chopper (125) °C VCEsat VCC 300 V; VGE 15 V td(on) 125 °C td(off) Rgon = Rgoff 100 tf inductive load Eon Eoff Cies VCE 25 V; VGE V, 1 MHz Rthjh per IGBT Diode 2) - Inverter & Chopper VF = VEC (125) °C VTO 300 V IRRM diF/dt ­ 200 A/µs Qrr Eoff VGE 125 °C per diode Rthjh Diode - Rectifier 25 °C Rthjh per diode Temperature Sensor T °C RTS Mechanical Data M1 case to heatsink, SI Units Case mechanical outline see page B min. typ. max. Units ­ 2,3 K/W 0,45 2,7 K/W 2,6 V K/W Nm

specification of temperature sensor see part A common characteristics see page B16­3

Options also available with single phase rectifier (called 11 NEB 06) also available with faster IGBTs (type... 063), data sheet on request

Theatsink = 25 °C, unless otherwise specified CAL = Controlled Axial Lifetime Technology (soft and fast recovery)

 Turn-on /-off energy = f (IC) ICpuls 10 A
 Rated current of the IGBT ICop = f (Th) 150 °C VGE 150 °C VGE 15 V tsc 10 µs Lext 25 nH
 Turn-off safe operating area (RBSOA) of the IGBT
 Safe operating area at short circuit of the IGBT
Typ. freewheeling diode forward characteristic © by SEMIKRON
Forward characteristic of the input bridge diode ­ 3