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Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

 Details

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

900 V

Id - Continuous Drain Current:

4 A

Rds On - Drain-Source Resistance:

4.2 Ohms

Vgs - Gate-Source Voltage:

30 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

150 C

Configuration:

Single

Pd - Power Dissipation:

140 W

Channel Mode:

Enhancement

Tradename:

QFET

Height:

16.3 mm

Length:

10.67 mm

Series:

FQP4N90C

Transistor Type:

1 N-Channel

Type:

MOSFET

Width:

4.7 mm

Brand:

ON Semiconductor / Fairchild

Forward Transconductance - Min:

5 S

Fall Time:

35 ns

Product Type:

MOSFET

Rise Time:

50 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

40 ns

Typical Turn-On Delay Time:

25 ns

Unit Weight:

1.800 g