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| Product Category: | IGBT Modules | |
| Manufacturer: | Infineon | |
| Product: | IGBT Silicon Modules | |
| Configuration: | Hex | |
| Collector- Emitter Voltage VCEO Max: | 1200 V | |
| Collector-Emitter Saturation Voltage: | 2.15 V | |
| Continuous Collector Current at 25 C: | 105 A | |
| Gate-Emitter Leakage Current: | 400 nA | |
| Pd - Power Dissipation: | 355 W | |
| Package / Case: | Econo 3 | |
| Maximum Operating Temperature: | 125 C | |
| Brand: | Infineon Technologies | |
| Height: | 17 mm | |
| Length: | 122 mm | |
| Maximum Gate Emitter Voltage: | /- 20 V | |
| Minimum Operating Temperature: | - 40 C | |
| Mounting Style: | Screw | |
| Factory Pack Quantity: | 10 | |
| Width: | 62 mm | |
| Part # Aliases: | FP75R12KT3BOSA1 | |
| Unit Weight: | 300 g |
