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Manufacturer:

Infineon

Product Category:

IGBT Modules

RoHS:

 Details

Product:

IGBT Silicon Modules

Configuration:

Dual

Collector- Emitter Voltage VCEO Max:

1200 V

Collector-Emitter Saturation Voltage:

2.15 V

Continuous Collector Current at 25 C:

520 A

Gate-Emitter Leakage Current:

400 nA

Pd - Power Dissipation:

2400 W

Package / Case:

62 mm

Minimum Operating Temperature:

- 40 C

Maximum Operating Temperature:

150 C

Packaging:

Tray

Height:

30.5 mm

Length:

106.4 mm

Width:

61.4 mm

Brand:

Infineon Technologies

Mounting Style:

Screw

Maximum Gate Emitter Voltage:

20 V

Product Type:

IGBT Modules

Factory Pack Quantity:

10

Subcategory:

IGBTs

Part # Aliases:

FF450R12KE4HOSA1 SP000370610

Unit Weight:

337 g