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| Product Attributes | ||
| Categories | Discrete Semiconductor Products | |
|---|---|---|
| Transistors - FETs, MOSFETs - Single | ||
| Manufacturer | Microsemi Corporation | |
| Series | POWER MOS IV® | |
| Packaging | Tube | |
| Part Status | ||
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2950pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 310W (Tc) | |
| Rds On (Max) @ Id, Vgs | 400 mOhm @ 9A, 10V | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247AD | |
| Package / Case | TO-247-3 |