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| Product Category: | IGBT Transistors | |
| Manufacturer: | ON Semiconductor | |
| RoHS: |  Details | |
| Technology: | Si | |
| Package / Case: | TO-247-3 | |
| Mounting Style: | Through Hole | |
| Configuration: | Single | |
| Collector- Emitter Voltage VCEO Max: | 1200 V | |
| Collector-Emitter Saturation Voltage: | 2.45 V | |
| Maximum Gate Emitter Voltage: | /- 20 V | |
| Continuous Collector Current at 25 C: | 21 A | |
| Pd - Power Dissipation: | 167 W | |
| Minimum Operating Temperature: | - 55 C | |
| Maximum Operating Temperature: | 150 C | |
| Series: | HGTG5N120BND | |
| Packaging: | Tube | |
| Brand: | ON Semiconductor / Fairchild | |
| Continuous Collector Current: | 21 A | |
| Continuous Collector Current Ic Max: | 21 A | |
| Gate-Emitter Leakage Current: | /- 250 nA | |
| Height: | 20.82 mm | |
| Length: | 15.87 mm | |
| Factory Pack Quantity: | 30 | |
| Width: | 4.82 mm | |
| Part # Aliases: | HGTG5N120BND_NL | |
| Unit Weight: | 6.390 g |