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| Product Category: | MOSFET | |
| Manufacturer: | NXP | |
| Technology: | Si | |
| Mounting Style: | Through Hole | |
| Package / Case: | TO-220-3 | |
| Number of Channels: | 1 Channel | |
| Transistor Polarity: | N-Channel | |
| Vds - Drain-Source Breakdown Voltage: | 100 V | |
| Id - Continuous Drain Current: | 23 A | |
| Rds On - Drain-Source Resistance: | 77 mOhms | |
| Vgs - Gate-Source Voltage: | 20 V | |
| Minimum Operating Temperature: | - 55 C | |
| Maximum Operating Temperature: | 175 C | |
| Configuration: | Single | |
| Channel Mode: | Enhancement | |
| Brand: | NXP Semiconductors | |
| Fall Time: | 24 ns | |
| Height: | 9.4 mm | |
| Length: | 10.3 mm | |
| Pd - Power Dissipation: | 100 W | |
| Rise Time: | 39 ns | |
| Factory Pack Quantity: | 50 | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-Off Delay Time: | 26 ns | |
| Typical Turn-On Delay Time: | 8 ns | |
| Width: | 4.5 mm | |
| Unit Weight: | 6 g |