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| Product Category: | MOSFET | |
| Manufacturer: | IXYS | |
| RoHS: |  Details | |
| Technology: | Si | |
| Mounting Style: | Screw Mount | |
| Package / Case: | SOT-227-4 | |
| Number of Channels: | 1 Channel | |
| Transistor Polarity: | N-Channel | |
| Vds - Drain-Source Breakdown Voltage: | 500 V | |
| Id - Continuous Drain Current: | 61 A | |
| Rds On - Drain-Source Resistance: | 85 mOhms | |
| Vgs - Gate-Source Voltage: | 30 V | |
| Minimum Operating Temperature: | - 55 C | |
| Maximum Operating Temperature: | 150 C | |
| Configuration: | Single Dual Source | |
| Channel Mode: | Enhancement | |
| Tradename: | HyperFET | |
| Packaging: | Tube | |
| Brand: | IXYS | |
| Fall Time: | 22 ns | |
| Forward Transconductance - Min: | 50 S | |
| Height: | 9.6 mm | |
| Length: | 38.23 mm | |
| Pd - Power Dissipation: | 700 W | |
| Rise Time: | 25 ns | |
| Series: | IXFN64N50 | |
| Factory Pack Quantity: | 10 | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-Off Delay Time: | 85 ns | |
| Typical Turn-On Delay Time: | 30 ns | |
| Width: | 25.42 mm | |
| Unit Weight: | 30 g |