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| Product Category: | MOSFET | |
| Manufacturer: | ON Semiconductor | |
| RoHS: |  Details | |
| Technology: | Si | |
| Mounting Style: | Through Hole | |
| Package / Case: | TO-220-3 | |
| Number of Channels: | 1 Channel | |
| Transistor Polarity: | N-Channel | |
| Vds - Drain-Source Breakdown Voltage: | 800 V | |
| Id - Continuous Drain Current: | 5.8 A | |
| Rds On - Drain-Source Resistance: | 1.95 Ohms | |
| Vgs - Gate-Source Voltage: | 30 V | |
| Minimum Operating Temperature: | - 55 C | |
| Maximum Operating Temperature: | 150 C | |
| Configuration: | Single | |
| Channel Mode: | Enhancement | |
| Packaging: | Tube | |
| Brand: | ON Semiconductor / Fairchild | |
| Fall Time: | 45 ns | |
| Forward Transconductance - Min: | 5.9 S | |
| Height: | 16.3 mm | |
| Length: | 10.67 mm | |
| Pd - Power Dissipation: | 158 W | |
| Rise Time: | 70 ns | |
| Series: | FQP6N80 | |
| Factory Pack Quantity: | 50 | |
| Transistor Type: | 1 N-Channel | |
| Type: | MOSFET | |
| Typical Turn-Off Delay Time: | 65 ns | |
| Typical Turn-On Delay Time: | 30 ns | |
| Width: | 4.7 mm | |
| Unit Weight: | 1.800 g |