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| Product Category: | MOSFET | |
| Manufacturer: | ON Semiconductor | |
| RoHS: |  Details | |
| Technology: | Si | |
| Mounting Style: | Through Hole | |
| Package / Case: | TO-220-3 | |
| Number of Channels: | 1 Channel | |
| Transistor Polarity: | N-Channel | |
| Vds - Drain-Source Breakdown Voltage: | 100 V | |
| Id - Continuous Drain Current: | 80 A | |
| Rds On - Drain-Source Resistance: | 7.5 mOhms | |
| Vgs - Gate-Source Voltage: | 20 V | |
| Minimum Operating Temperature: | - 55 C | |
| Maximum Operating Temperature: | 175 C | |
| Configuration: | Single | |
| Channel Mode: | Enhancement | |
| Packaging: | Tube | |
| Brand: | ON Semiconductor / Fairchild | |
| Fall Time: | 46 ns | |
| Height: | 16.3 mm | |
| Length: | 10.67 mm | |
| Pd - Power Dissipation: | 310 W | |
| Rise Time: | 39 ns | |
| Series: | FDP3632 | |
| Factory Pack Quantity: | 50 | |
| Transistor Type: | 1 N-Channel | |
| Type: | MOSFET | |
| Typical Turn-Off Delay Time: | 96 ns | |
| Typical Turn-On Delay Time: | 30 ns | |
| Width: | 4.7 mm | |
| Part # Aliases: | FDP3632_NL | |
| Unit Weight: | 1.800 g |