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| Product Category: | IGBT Transistors | |
| Manufacturer: | Microsemi | |
| RoHS: |  Details | |
| Technology: | Si | |
| Package / Case: | TO-247-3 | |
| Mounting Style: | Through Hole | |
| Configuration: | Single | |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV | |
| Collector-Emitter Saturation Voltage: | 3.3 V | |
| Maximum Gate Emitter Voltage: | 30 V | |
| Continuous Collector Current at 25 C: | 69 A | |
| Pd - Power Dissipation: | 417 W | |
| Minimum Operating Temperature: | - 55 C | |
| Maximum Operating Temperature: | 150 C | |
| Brand: | Microsemi | |
| Continuous Collector Current: | 69 A | |
| Continuous Collector Current Ic Max: | 69 A | |
| Gate-Emitter Leakage Current: | 100 nA | |
| Height: | 5.31 mm | |
| Length: | 21.46 mm | |
| Operating Temperature Range: | - 55 C to 150 C | |
| Factory Pack Quantity: | 1 | |
| Width: | 16.26 mm | |
| Unit Weight: | 38 g |