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| Product Category: | IGBT Modules | |
| Manufacturer: | Infineon | |
| RoHS: |  Details | |
| Product: | IGBT Silicon Modules | |
| Configuration: | Hex | |
| Collector- Emitter Voltage VCEO Max: | 1200 V | |
| Collector-Emitter Saturation Voltage: | 2.5 V | |
| Continuous Collector Current at 25 C: | 35 A | |
| Gate-Emitter Leakage Current: | 180 nA | |
| Pd - Power Dissipation: | 200 W | |
| Package / Case: | EconoPACK 2 | |
| Maximum Operating Temperature: | 150 C | |
| Brand: | Infineon Technologies | |
| Height: | 17 mm | |
| Length: | 107.5 mm | |
| Maximum Gate Emitter Voltage: | /- 20 V | |
| Minimum Operating Temperature: | - 40 C | |
| Mounting Style: | Screw | |
| Factory Pack Quantity: | 10 | |
| Width: | 45 mm | |
| Part # Aliases: | BSM25GD120DN2E3224BOSA1 |
PRODUTOS RELACIONADOS
