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| Product Attributes | ||
| Categories | Discrete Semiconductor Products | |
|---|---|---|
| Transistors - FETs, MOSFETs - Single | ||
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Packaging | Tube | |
| Part Status | ||
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 900V | |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 58nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2040pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 85W (Tc) | |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 4A, 10V | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-3P(N)IS | |
| Package / Case | TO-3P-3, SC-65-3 |
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